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Volumn 103, Issue 4, 2013, Pages

Oligothiophene-based monolayer field-effect transistors prepared by Langmuir-Blodgett technique

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC SURFACE; HIGH POTENTIAL; LANGMUIR BLODGETT TECHNIQUES; LB TECHNIQUES; OLIGOTHIOPHENES; ORGANIC ELECTRONICS; ORGANIC FIELD-EFFECT TRANSISTOR (OFETS); ORGANOSILICONES;

EID: 84884999394     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4816839     Document Type: Article
Times cited : (37)

References (21)
  • 3
    • 84856185817 scopus 로고    scopus 로고
    • 10.1007/128-2011-220
    • C. R. Kagan, Top. Curr. Chem. 312, 213 (2012). 10.1007/128-2011-220
    • (2012) Top. Curr. Chem. , vol.312 , pp. 213
    • Kagan, C.R.1
  • 12
    • 0033884897 scopus 로고    scopus 로고
    • 10.1021/la9904455
    • G. F. Xu, Z. A. Bao, and J. T. Groves, Langmuir 16 (4), 1834 (2000). 10.1021/la9904455
    • (2000) Langmuir , vol.16 , Issue.4 , pp. 1834
    • Xu, G.F.1    Bao, Z.A.2    Groves, J.T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.