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Angewandte Chemie - International Edition

Volumn 49, Issue 36, 2010, Pages 6319-6323

High-performance langmuir-blodgett monolayer transistors with high responsivity

(9) Cao, Yang a Wei, Zhongming b Liu, Song a Gan, Lin a Guo, Xuefeng a Xu, Wei b Steigerwald, Michael L c Liu, Zhongfan a Zhu, Daoben b

a PEKING UNIVERSITY (China)

b INSTITUTE OF CHEMISTRY (China)

c Och Spine at New York Presbyterian Hospitals (United States)

Author keywords

Field effect transistors; Graphene; Molecular devices; Monolayers; Photoresponsivity

Indexed keywords

BULK-LIKE; COPPER PHTHALOCYANINE; GRAPHENES; LANGMUIR BLODGETT TECHNIQUES; LANGMUIR-BLODGETT MONOLAYERS; MOLECULAR DEVICES; MOLECULAR FIELDS; ON/OFF CURRENT RATIO; PHOTORESPONSIVITY; RESPONSIVITY; SELF-ASSEMBLED; SINGLE LAYER;

CARRIER MOBILITY; ELECTRON ENERGY LEVELS; GRAPHENE; SELF ASSEMBLED MONOLAYERS; THIN FILM TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 77956050450 PISSN: 14337851 EISSN: 15213773 Source Type: Journal
DOI: 10.1002/anie.201001683 Document Type: Article

Times cited : (80)

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