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Volumn 580, Issue , 2013, Pages 354-357

Programmable metallization cells based on amorphous La 0.79Sr0.21MnO3 thin films for memory applications

Author keywords

Amorphous thin film; Programmable metallization cell (PMC); Resistive switching

Indexed keywords

AMORPHOUS FILMS; CELLS; CYTOLOGY; MAGNETRON SPUTTERING; MANGANESE OXIDE; METALLIZING; NONVOLATILE STORAGE; SILVER; SOLID ELECTROLYTES; SWITCHING SYSTEMS;

EID: 84884252820     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2013.06.095     Document Type: Article
Times cited : (34)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.