Dependence of annealing on stability of transparent amorphous InGaZnO thin film transistor

Materials Science in Semiconductor Processing

Volumn 16, Issue 5, 2013, Pages 1292-1296

  Li, Xifeng ^a   Xin, Enlong ^a   Chen, Longlong ^a   Shi, Jifeng ^a   Li, Chunya ^a   Zhang, Jianhua ^a  

^a SHANGHAI UNIVERSITY   (China)

Author keywords

Annealing; IGZO thin film transistor; Stability

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CONVERGENCE OF NUMERICAL METHODS; TEMPERATURE; THIN FILM TRANSISTORS; THIN FILMS;

AMORPHOUS INGAZNO; DEVICE ANNEALING; LOW TEMPERATURES; ON/OFF CURRENT RATIO; POSITIVE GATE BIAS; POST ANNEALING TREATMENT; SATURATION MOBILITY; SUBTHRESHOLD SWING;

THIN FILM CIRCUITS;

EID: 84884207171     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2013.02.013     Document Type: Article

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