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Applied Physics Letters

Volumn 98, Issue 4, 2011, Pages

Growth of multilayers of Bi2Se3/ZnSe: Heteroepitaxial interface formation and strain

(6) Li, H D a,b Wang, Z Y a Guo, X a Wong, Tai Lun c Wang, Ning c Xie, M H a

a UNIVERSITY OF HONG KONG (Hong Kong)

b BEIJING JIAOTONG UNIVERSITY (China)

c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH MODES; HETEROEPITAXIAL; INTERFACE FORMATION; MORPHOLOGICAL PROPERTIES; RELAXATION RATES; SI (1 1 1); THREE-DIMENSIONAL GROWTH; TWO-DIMENSIONAL NUCLEATION;

EPITAXIAL GROWTH; MULTILAYERS; SEMICONDUCTING SILICON COMPOUNDS; STRAIN RATE;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 79551615584 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3548865 Document Type: Article

Times cited : (33)

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