First-principles study of p-n-doped silicon quantum dots: Charge transfer, energy dissipation, and time-resolved emission

Journal of Physical Chemistry Letters

Volumn 4, Issue 17, 2013, Pages 2906-2913

  Chen, Jiangchao ^a   Schmitz, Andrew ^a   Inerbaev, Talgat ^b   Meng, Qingguo ^a   Kilina, Svetlana ^c   Tretiak, Sergei ^d   Kilin, Dmitri S ^a  

^a University of South Dakota   (United States)

^b L N GUMILYOV EURASIAN NATIONAL UNIVERSITY   (Kazakhstan)

^c NORTH DAKOTA STATE UNIVERSITY   (United States)

^d LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

absorption; charge transfer; energy dissipation; nonadiabatic dynamics; semiconductor

Indexed keywords

AB INITIO ELECTRONIC STRUCTURE METHODS; ELECTRON PHONON COUPLINGS; NON-ADIABATIC DYNAMICS; PHOTOEXCITED ELECTRON-HOLE PAIRS; POPULATION DENSITY DISTRIBUTION; SEMICONDUCTOR NANOSTRUCTURES; TIME-DEPENDENT DENSITY MATRIX; TIME-RESOLVED EMISSION SPECTRA;

ABSORPTION; ALUMINUM; CHARGE TRANSFER; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; ENERGY DISSIPATION; POPULATION STATISTICS; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM DOTS;

SILICON;

EID: 84883756009     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz400760h     Document Type: Article

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