Computational simulation of the p-n doped silicon quantum dot

International Journal of Quantum Chemistry

Volumn 112, Issue 24, 2012, Pages 3879-3888

  Chen, Jiangchao ^a   Schmitz, Andrew ^a   Kilin, Dmitri S ^a  

^a University of South Dakota   (United States)

Author keywords

charge transfer; co doped silicon quantum dot; nanowire; non adiabatic dynamics; p n junction

Indexed keywords

ATOMISTIC SCALE; CO-DOPED; COMPUTATIONAL SIMULATION; CORE ELECTRONS; CRYSTALLINE SILICONS; DOPED SILICON; ELECTRONIC DYNAMICS; HIGH TEMPERATURE; HIGHEST OCCUPIED MOLECULAR ORBITAL; LOWEST UNOCCUPIED MOLECULAR ORBITAL; NON-ADIABATIC COUPLING; NON-ADIABATIC DYNAMICS; P-N JUNCTION; PLANE WAVE; PSEUDOPOTENTIALS; THERMAL MOTION; VALENT ELECTRONS;

ALUMINUM; CHARGE TRANSFER; COUPLINGS; DOPING (ADDITIVES); DYNAMICS; ELECTRONIC STRUCTURE; IONS; NANOWIRES; PHOSPHORUS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE;

SILICON;

EID: 84869090141     PISSN: 00207608     EISSN: 1097461X     Source Type: Journal    
DOI: 10.1002/qua.24291     Document Type: Conference Paper

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