Quantum dynamics simulations of interfacial electron transfer in sensitized TiO2 semiconductors

Journal of the American Chemical Society

Volumn 125, Issue 26, 2003, Pages 7989-7997

  Rego, Luis G C ^a   Batista, Victor S ^a  

^a YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

QUANTUM DYNAMICS;

ANISOTROPY; COMPUTER SIMULATION; ELECTRON TRANSITIONS; QUANTUM THEORY; SEMICONDUCTOR MATERIALS;

TITANIUM DIOXIDE;

CATECHOL; NANOPARTICLE; TITANIUM DIOXIDE;

AB INITIO CALCULATION; ADSORPTION; ANISOTROPY; ARTICLE; CHEMICAL STRUCTURE; CRYSTAL STRUCTURE; DEVICE; DIFFUSION; ELECTRON TRANSPORT; MOLECULAR DYNAMICS; QUANTUM CHEMISTRY; SEMICONDUCTOR; SENSITIZATION; SIMULATION; SURFACE PROPERTY; VACUUM;

EID: 0038202051     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja0346330     Document Type: Article

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