Investigation of temperature dependent threshold voltage variation of Gd2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure

AIP Advances

Volumn 2, Issue 3, 2012, Pages

  Das, Atanu ^a   Chang, Liann Be ^a   Lin, Ray Ming ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; GADOLINIUM COMPOUNDS; GALLIUM NITRIDE; GATE DIELECTRICS; HETEROJUNCTIONS; III-V SEMICONDUCTORS; METALS; MOS DEVICES; TEMPERATURE MEASUREMENT; THRESHOLD VOLTAGE; WIDE BAND GAP SEMICONDUCTORS;

CAPACITANCE VOLTAGE MEASUREMENTS; ELECTRON-CAPTURE PROCESS; FRENKEL-POOLE EMISSION; INTERFACE REGIONS; MEASURED TEMPERATURES; METAL OXIDE SEMICONDUCTOR; TEMPERATURE DEPENDENT; THRESHOLD VOLTAGE VARIATION;

OXIDE SEMICONDUCTORS;

EID: 84883723522     PISSN: None     EISSN: 21583226     Source Type: Journal    
DOI: 10.1063/1.4750481     Document Type: Article

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