P-side up AlGaInP-based light emitting diodes with dot-patterned GaAs contact layers

Optics Express

Volumn 21, Issue 17, 2013, Pages 19668-19674

  Horng, Ray Hua ^a   Wu, Bing Rui ^a   Weng, Chi Feng ^a   Ravadgar, Parvaneh ^b   Wu, Tzong Ming ^a   Wang, Sing Ping ^c   He, Jr Hau ^c   Yang, Tsung Hsien ^d   Chen, Yi Ming ^d   Hsu, Tzu Chieh ^d   Liu, Ai Sen ^d   Wuu, Dong Sing ^a,e  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^d EPISTAR CORPORATION   (Taiwan)

^e DA YEH UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; GALLIUM ARSENIDE; LIGHT REFLECTION; LITHOGRAPHY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM;

CONTACT LAYERS; CURRENT SPREADING; EPITAXIALLY GROWN; HIGH BRIGHTNESS; LIGHT EXTRACTION; MAIN STRUCTURE; ROUGHENED SURFACES; TRANSFERRING PROCESS;

LIGHT EMITTING DIODES;

EID: 84883227011     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.21.019668     Document Type: Article

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