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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2747-2751

High-brightness wafer-bonded indium-tin oxide/light-emitting diode/mirror/Si

(9) Horng, Ray Hua a Lien, Yi Chung b Peng, Wei Chih b Wuu, Dong Sing b Tseng, Chung Yang c Seieh, Chi Hua c Huang, Man Fang c Tsai, Shi Jen c Liu, Jin Shiarng c

a NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

b DA YEH UNIVERSITY (Taiwan)

c Visual Photonics Epitaxy Co Ltd (Taiwan)

Author keywords

Current spreading layer; ITO; Light emitting diodes; Mirror substrate; Wafer bonding; Window material

Indexed keywords

CONDUCTIVE MATERIALS; MIRRORS; OPTICAL FIBER FABRICATION; QUANTUM EFFICIENCY; REFRACTIVE INDEX; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SPUTTERING; SUBSTRATES; TRANSPARENCY;

CURRENT-SPREADING LAYERS; WAFER BONDING;

LIGHT EMITTING DIODES;

EID: 0035300752 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.2747 Document Type: Article

Times cited : (8)

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