Wafer-bonded AlGaInP/Au/AuBe/SiO2/Si light-emitting diodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2357-2359

  Horng, Ray Hua ^a   Wuu, Dong Sing ^b   Wei, Sun Chin ^b   Tseng, Chung Yang ^b   Huang, Man Fang ^c   Chang, Kuo Hsiung ^c   Liu, Pin Hui ^c   Lin, Kun Chuan ^c  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b DA YEH UNIVERSITY   (Taiwan)

^c Visual Photonics Epitaxy Co Ltd   (Taiwan)

Author keywords

Absorbed substrate; AlGalnP; Joule heatin; LED; Mirror substrate; Wafer bonding

Indexed keywords

BONDING; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; GOLD ALLOYS; HETEROJUNCTIONS; LEAKAGE CURRENTS; LIGHT EMISSION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA;

ALUMINUM GALLIUM INDIUM PHOSPHIDE; BRAGG REFLECTOR STRUCTURE; GOLD BERYLLIUM ALLOYS; INJECTION CURRENT; JOULE HEATING; WAFER BONDING;

LIGHT EMITTING DIODES;

EID: 0033723896     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2357     Document Type: Article

References (7)

1. H. Sugawara, K. Itaya and G. Hatakoshi: Jpn. J. Appl. Phys. 33 (1994) 6195.
2. H. Sugawara, K. Itaya and G. Hatakoshi: J. Appl. Phys. 74 (1993) 3189.
3. F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, M. G. Craford and V. M. Robbins: Appl. Phys. Lett. 64 (1994) 2839.
4. F. A. Kish, D. A. Vanderwater, D. C. DeFevere, D. A. Steigerwald, G. E. Hofler, K. G. Park and F. M. Steranka: Electron. Lett. 32 (1996) 132.
5. F. A. Kish, D. A. Vanderwater and M. J. Peanasky, M. J. Ludowise, S. G. Hummel and S. J. Rosner: Appl. Phys. Lett. 67 (1995) 2060.
6. I. Schnitzer, E. Yablonovitch, C. Caneau and T. J. Gmitter: Appl. Phys. Lett. 62 (1993) 131.
7. I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter and A. Scherer: Appl. Phys. Lett. 63 (1993) 2174.