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Japanese Journal of Applied Physics

Volumn 52, Issue 8 PART 2, 2013, Pages

Impact of group-ii acceptors on the electrical and optical properties of GaN

(3) Lyons, John L a Janotti, Anderson a Van De Walle, Chris G a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL AND OPTICAL PROPERTIES; HOLE LOCALIZATION; HYBRID DENSITY FUNCTIONAL CALCULATIONS; LATTICE DISTORTIONS; LOCALIZED HOLES; LUMINESCENCE SIGNALS; WURTZITE PHASE; ZINC-BLENDE GAN;

GALLIUM NITRIDE; SEMICONDUCTOR DOPING; ZINC SULFIDE;

ELECTRIC PROPERTIES;

EID: 84883181569 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.7567/JJAP.52.08JJ04 Document Type: Article

Times cited : (56)

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