Extremely high absolute internal quantum efficiency of photoluminescence in co-doped GaN:Zn,Si

Applied Physics Letters

Volumn 99, Issue 17, 2011, Pages

  Reshchikov, M A ^a   Willyard, A G ^a   Behrends, A ^b   Bakin, A ^b   Waag, A ^b  

^a VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

^b TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE PHOTOLUMINESCENCE; CO-DOPED; INTERNAL QUANTUM EFFICIENCY; RATE EQUATIONS;

GALLIUM NITRIDE; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; ZINC;

QUANTUM EFFICIENCY;

EID: 80555139998     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3655678     Document Type: Article

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