Enhanced carrier extraction from Ge quantum dots in Si solar cells under strong photoexcitation

Applied Physics Letters

Volumn 101, Issue 13, 2012, Pages

  Tayagaki, Takeshi ^a,b   Usami, Noritaka ^c   Pan, Wugen ^c   Hoshi, Yusuke ^c   Ooi, Kazufumi ^a   Kanemitsu, Yoshihiko ^a  

^a KYOTO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER RECOMBINATION; CARRIER EXTRACTION; EXCITATION INTENSITY; HOT CARRIER GENERATION; NONLINEAR CARRIER; PHOTOCURRENT GENERATIONS; PHOTOCURRENT MEASUREMENT; PHOTON ABSORPTIONS;

EXTRACTION; GERMANIUM; PHOTOEXCITATION; PHOTONS; SEMICONDUCTOR QUANTUM DOTS; SILICON; TWO PHOTON PROCESSES;

SILICON SOLAR CELLS;

EID: 84882362639     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4756895     Document Type: Article

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