Band alignment and conversion efficiency in Si/Ge type-II quantum dot intermediate band solar cells

Nanotechnology

Volumn 18, Issue 40, 2007, Pages

  Kechiantz, A M ^a,b   Kocharyan, L M ^c   Kechiyants, H M ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b STATE ENGINEERING UNIVERSITY OF ARMENIA   (Armenia)

^c YEREVAN STATE UNIVERSITY   (Armenia)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CONVERSION EFFICIENCY; DARK CURRENTS; FABRICATION; FERMI LEVEL; PHOTOCURRENTS; PHOTONS; SEMICONDUCTOR QUANTUM DOTS;

BAND ALIGNMENTS; INTERMEDIATE BAND SOLAR CELLS; POTENTIAL BARRIERS; SUNLIGHT CONCENTRATION;

SOLAR CELLS;

GERMANIUM; QUANTUM DOT; SILICON;

ARTICLE; DOPING; LIGHT ABSORPTION; PRIORITY JOURNAL; QUANTUM CHEMISTRY; SUNLIGHT; TECHNOLOGY;

EID: 34748857317     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/40/405401     Document Type: Article

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