A rigorous model for through-silicon vias with ohmic contact in silicon interposer

IEEE Microwave and Wireless Components Letters

Volumn 23, Issue 8, 2013, Pages 385-387

  Yang, De Cao ^a   Xie, Jianyong ^b   Swaminathan, Madhavan ^b   Wei, Xing Chang ^a   Li, Er Ping ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Crosstalk; metal oxide semiconductor (MOS) capacitance; ohmic contact; signal integrity; through silicon via (TSV)

Indexed keywords

DOPING DENSITIES; FULL-WAVE SIMULATIONS; METAL OXIDE SEMICONDUCTOR; METAL-SILICON INTERFACES; SIGNAL INTEGRITY; SILICON INTERPOSERS; THROUGH SILICON VIAS; THROUGH-SILICON VIA;

CAPACITANCE; CROSSTALK; ELECTRIC CONTACTORS; ELECTRONICS PACKAGING; OHMIC CONTACTS; SEMICONDUCTOR DOPING; SILICON;

COMPUTER SIMULATION;

EID: 84882336358     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2013.2270459     Document Type: Article

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