Nondestructive characterization of textured a-Si:H/c-Si heterojunction solar cell structures with nanometer-scale a-Si:H and In2O 3:Sn layers by spectroscopic ellipsometry

Journal of Applied Physics

Volumn 114, Issue 4, 2013, Pages

  Matsuki, Nobuyuki ^a   Fujiwara, Hiroyuki ^a  

^a GIFU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SILICONS; DIELECTRIC FUNCTIONS; HETEROJUNCTION SOLAR CELLS; HYDROGENATED AMORPHOUS SILICON (A-SI:H); NONDESTRUCTIVE CHARACTERIZATION; NONDESTRUCTIVE METHODS; STRUCTURAL CHARACTERIZATION; TILT ANGLE MEASUREMENT;

HETEROJUNCTIONS; NONDESTRUCTIVE EXAMINATION; SOLAR CELLS; SPECTROSCOPIC ELLIPSOMETRY; TIN;

SILICON;

EID: 84882334121     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4812479     Document Type: Article

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