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Volumn 3, Issue 7, 2013, Pages

Molecular beam epitaxial growth of Bi2Te3 and Sb 2Te3 topological insulators on GaAs (111) substrates: A potential route to fabricate topological insulator p-n junction

(14) Zeng, Zhaoquan a,f Morgan, Timothy A a Fan, Dongsheng a,b Li, Chen a Hirono, Yusuke a Hu, Xian a Zhao, Yanfei c Lee, Joon Sue d Wang, Jian c,d Wang, Zhiming M a,e,f Yu, Shuiqing a,b Hawkridge, Michael E a Benamara, Mourad a Salamo, Gregory J a

a UNIVERSITY OF ARKANSAS (United States)

b University of Arkansas (United States)

c PEKING UNIVERSITY (China)

d PENNSYLVANIA STATE UNIVERSITY (United States)

e UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (China)

f INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY COMPOUNDS; ATOMIC FORCE MICROSCOPY; BISMUTH COMPOUNDS; ELECTRIC INSULATORS; FABRICATION; GALLIUM ARSENIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NARROW BAND GAP SEMICONDUCTORS; OPTOELECTRONIC DEVICES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; TELLURIUM COMPOUNDS; TOPOLOGICAL INSULATORS;

EPITAXIALLY GROWN; FABRICATION PROCESS; MAGNETORESISTANCE MEASUREMENTS; MOLECULAR BEAM EPITAXIAL GROWTH; P-N JUNCTION; SEMICONDUCTOR OPTOELECTRONIC DEVICES; SOLID SOURCE MOLECULAR BEAM EPITAXY; VICINAL SUBSTRATES;

SUBSTRATES;

EID: 84882306204 PISSN: None EISSN: 21583226 Source Type: Journal
DOI: 10.1063/1.4815972 Document Type: Article

Times cited : (76)

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