Epitaxial growth of Bi 2Se 3 layers on InP substrates by hot wall epitaxy

Semiconductor Science and Technology

Volumn 27, Issue 3, 2012, Pages

  Takagaki, Y ^a   Jenichen, B ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH SURFACES; HOT-WALL EPITAXY; IN-PLANE; INP; INP SUBSTRATES; LATTICE PERIODICITY; LATTICE-MATCHED; SURFACE STATE; TWO DIRECTIONS; VAN DER WAALS;

EPITAXIAL GROWTH; SUBSTRATES; VAN DER WAALS FORCES;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84857375098     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/3/035015     Document Type: Article

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