Structural properties of Bi2Te3 and Bi 2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates

Applied Physics Letters

Volumn 99, Issue 17, 2011, Pages

  Liu, X ^a   Smith, D J ^b   Fan, J ^b,c   Zhang, Y H ^c   Cao, H ^d   Chen, Y P ^d   Leiner, J ^a   Kirby, B J ^e   Dobrowolska, M ^a   Furdyna, J K ^a  

^a UNIVERSITY OF NOTRE DAME   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c AZ 85281   (United States)

^d PURDUE UNIVERSITY   (United States)

^e NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERISTIC PEAKS; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; FERROMAGNETIC SEMICONDUCTOR; FUTURE APPLICATIONS; GAAS SUBSTRATES; GAAS(001); OVERALL QUALITY; RAMAN MAPPING; TWO-MATERIALS;

CRYSTAL SYMMETRY; ELECTRIC INSULATORS; EPITAXIAL GROWTH; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SELENIUM COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 80555129573     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3655995     Document Type: Article

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