Characterization of polishing induced defects and hydrofluoric acid passivation effect in ZnO

Applied Physics Letters

Volumn 103, Issue 7, 2013, Pages

  Zhang, Zhichun ^a   Quemener, V ^b   Lin, C H ^a   Svensson, B G ^b   Brillson, L J ^a,c  

^a The Ohio State University   (United States)

^b UNIVERSITY OF OSLO   (Norway)

^c OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE SPECTROSCOPY; DEPTH-RESOLVED; INDUCED DEFECTS; MECHANICAL POLISHING; NATIVE POINT DEFECTS; PASSIVATION EFFECT; TRANSIENT PHOTOVOLTAGE; VACANCY-RELATED DEFECTS;

DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECT DENSITY; HYDROFLUORIC ACID; OXYGEN VACANCIES; POINT DEFECTS; POLISHING; ZINC OXIDE;

SURFACE DEFECTS;

EID: 84882297668     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4818712     Document Type: Article

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