Electronic properties of vacancy related defects in ZnO induced by mechanical polishing

Applied Physics Letters

Volumn 99, Issue 11, 2011, Pages

  Quemener, V ^a   Vines, L ^a   Monakhov, E V ^a   Svensson, B G ^a  

^a UNIVERSITY OF OSLO   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BAND EDGE; DEEP LEVEL; DEFECTS INDUCED; DILUTED HYDROFLUORIC ACIDS; ENERGY BANDGAPS; ENERGY LEVEL; HYDROTHERMALLY; MECHANICAL POLISHING; NEAR SURFACE REGIONS; SHALLOW DONORS; TEMPERATURE RANGE; VACANCY-RELATED DEFECTS; ZNO;

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONIC PROPERTIES; HYDROFLUORIC ACID; POLISHING; POWER QUALITY; SURFACE DEFECTS; ZINC OXIDE;

MECHANICAL PROPERTIES;

EID: 80053216932     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3638470     Document Type: Article

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