Control of Li configuration and electrical properties of Li-doped ZnO

Journal of Physics D: Applied Physics

Volumn 45, Issue 37, 2012, Pages

  Zhang, Z ^a   Knutsen, K E ^b   Merz, T ^c   Kuznetsov, A Yu ^b   Svensson, B G ^c   Brillson, L J ^a,c  

^a The Ohio State University   (United States)

^b UNIVERSITY OF OSLO   (Norway)

^c OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR DENSITY; ANNEALING TEMPERATURES; BANDBENDING; CATHODOLUMINESCENCE SPECTROSCOPY; CONDUCTION BAND EDGE; DEPTH DISTRIBUTION; DEPTH-RESOLVED; DIFFUSION LENGTH; INTERSTITIAL DIFFUSION; INTERSTITIALS; INVERSE RELATIONSHIP; LEVEL TRANSITION; NANO SCALE; OPTICAL EMISSIONS; OPTICAL SIGNATURES; P-TYPE; ROOM-TEMPERATURE RESISTIVITY; SEMI-INSULATING MATERIALS; SURFACE PHOTOVOLTAGE SPECTROSCOPY; SURFACE SCIENCE TECHNIQUES; THERMAL PROCESS; TIME DEPENDENCE; ZINC VACANCY; ZNO; ZNO SURFACE;

CONDUCTION BANDS; DIFFUSION; ELECTRIC PROPERTIES; SECONDARY ION MASS SPECTROMETRY; VACANCIES; ZINC; ZINC OXIDE;

LITHIUM;

EID: 84865957921     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/37/375301     Document Type: Article

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