Fabrication and photoluminescence of SiC quantum dots stemming from 3C, 6H, and 4H polytypes of bulk SiC

Applied Physics Letters

Volumn 101, Issue 13, 2012, Pages

  Fan, Jiyang ^a,b   Li, Hongxia ^c   Wang, Jing ^a   Xiao, Min ^a,d  

^a UNIVERSITY OF ARKANSAS   (United States)

^b SOUTHEAST UNIVERSITY   (China)

^c NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^d NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMICAL METHODS; FUNDAMENTAL PHYSICS; NANO-SCALE SIC; PHOTO-LUMINESCENCE EXCITATION; PHOTOLUMINESCENCE PROPERTIES; POLYTYPES;

PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS;

SILICON CARBIDE;

EID: 84882282852     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4755778     Document Type: Article

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