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Volumn 94, Issue 20, 2009, Pages

The 3C-6H polytypic transition in SiC as revealed by diffuse x-ray scattering

Author keywords

[No Author keywords available]

Indexed keywords

C ATOMS; DIFFUSE SCATTERING; DIFFUSE X-RAY SCATTERING; NON DESTRUCTIVE; NUMERICAL SIMULATION; PARTIAL DISLOCATIONS; TRANSITION LEVEL;

DISLOCATIONS (CRYSTALS); SILICON CARBIDE; SINGLE CRYSTALS; X RAY SCATTERING;

SCATTERING;

EID: 65949108378 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3141509 Document Type: Article

Times cited : (16)

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