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Physical Review Letters

Volumn 103, Issue 25, 2009, Pages

Spontaneous formation and growth of a new polytype on SiC(0001)

(4) Hannon, J B a Tromp, R M a Medhekar, N V b Shenoy, V B b

a IBM T J WATSON RESEARCH CENTER (United States)

b Brown University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING IN VACUUM; BI-LAYER; DEEP GROOVE; HOMOEPITAXY; IN-SITU ELECTRON MICROSCOPY; POLYTYPES; SPONTANEOUS FORMATION; STEP BUNCHING; STEP EDGE; SURFACE STEPS;

SILICON CARBIDE;

EID: 72049098526 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.103.256101 Document Type: Article

Times cited : (13)

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