메뉴 건너뛰기




Volumn 13, Issue 8, 2013, Pages 3648-3653

Resistive switching at the nanoscale in the Mott insulator compound GaTa4Se8

Author keywords

electronic phase separation; Mott memories; Resistive switches; STM

Indexed keywords

ELECTRONIC PHASE SEPARATION; ELECTRONIC TRANSITION; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHES; RESISTIVE SWITCHING; RESISTIVE TRANSITION; SCANNING TUNNELING MICROSCOPY/SPECTROSCOPY; STM;

EID: 84881560757     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl401510p     Document Type: Article
Times cited : (67)

References (24)
  • 1
    • 84881581203 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors
    • International Technology Roadmap for Semiconductors, http://www.itrs.net/ (2011).
    • (2011)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.