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Volumn 222, Issue 5, 2013, Pages 1046-1056

Electric field induced avalanche breakdown and non-volatile resistive switching in the Mott Insulators AM4Q8

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Indexed keywords


EID: 84880447926     PISSN: 19516355     EISSN: 19516401     Source Type: Journal    
DOI: 10.1140/epjst/e2013-01905-1     Document Type: Article
Times cited : (17)

References (37)
  • 1
    • 84880412772 scopus 로고    scopus 로고
    • International technology roadmap for semiconductors
    • "International technology roadmap for semiconductors" 2011, www. itrs. net.
    • (2011)
  • 37
    • 84880438717 scopus 로고    scopus 로고
    • [arXiv: 1105. 4246] [cs. CG]
    • M. M. A. Ferrero [arXiv: 1105. 4246] [cs. CG], (2011).
    • (2011)
    • Ferrero, M.M.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.