Combinatorial synthesis of Cu/(TaxNb1-x) 2O5 stack structure for nanoionics-type ReRAM device

ACS Combinatorial Science

Volumn 15, Issue 8, 2013, Pages 435-438

  Nagata, Takahiro ^a   Haemori, Masamitsu ^a   Chikyow, Toyohiro ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

combinatorial pulsed laser deposition method; dielectric oxide; resistive random access memory; X ray photoelectron spectroscopy

Indexed keywords

COPPER;

ARTICLE; CHEMISTRY; COMBINATORIAL CHEMISTRY; NANOTECHNOLOGY; X RAY DIFFRACTION;

COMBINATORIAL CHEMISTRY TECHNIQUES; COPPER; NANOTECHNOLOGY; X-RAY DIFFRACTION;

EID: 84881527858     PISSN: 21568952     EISSN: None     Source Type: Journal    
DOI: 10.1021/co4000425     Document Type: Article

References (29)

1. Waser, R. Resistive non-volatile memory devices Microelctron. Eng. 2009, 86, 1925
2. Karg, S. F.; Meijer, G. I.; Bednorz, J. G.; Rettner, C. T.; Schtorr, A. G.; Joseph, E. A.; Lam, C. H.; Janousch, M.; Staub, U.; LaMattina, F.; Alvarado, S. F.; Widmer, D.; Stutz, R.; Drechsler, U.; Caimi, D. Transition-metal-oxide- based resistance-change memories IBM J. Res. Dev. 2008, 52, 481
3. Pagnia, H.; Sotnik, N. Bistable switching in electroformed metal-insulator-metal devices Phys. Status Solidi 1988, 108, 11
4. Chudnovskii, F. A.; Odynets, L. L.; Pergament, A. L.; Stefanovich, G. B. Electroforming and switching in oxides of transition metals: The role of metal-insulator transition in the switching mechanism J. Solid State Chem. 1996, 122, 95
5. Asamitsu, A.; Tomioka, Y.; Kuwahara, H.; Tokura, Y. Current switching of resistive states in magnetoresistive manganites Nature 1997, 388, 50
6. Fors, R.; Khartsev, S. I.; Grishin, A. M. Giant resistance switching in metal-insulator-manganite junctions: Evidence for Mott transition Phys. Rev. B 2005, 71, 045305
7. 3/Pt sandwich structure: Evidence for a Mott transition Phys. Rev. B 2006, 74, 174430
8. 3 Phys. Rev. B 2005, 72, 155102
9. Waser, R.; Aono, M. Nanoionics-based resistive switching memories Nat. Mater. 2007, 6, 833
10. Sakamoto, T.; Sunamura, H.; Kawaura, H.; Hasegawa, T.; Nakayama, T.; Aono, M. Nanometer-scale switches using copper sulfide Appl. Phys. Lett. 2003, 82, 3032
11. Banno, N.; Sakamoto, T.; Hasegawa, T.; Terabe, K.; Aono, M. Effect of ion diffusion on switching voltage of solid-electrolyte nanometer switch Jpn. J. Appl. Phys. 2006, 45, 3666
12. Terabe, K.; Hasegawa, T.; Nakayama, T.; Aono, M. Quantized conductance atomic switch Nature 2005, 433, 47
13. Kim, Y.-M.; Lee, J.-S. Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices J. Appl. Phys. 2008, 104, 114115
14. 5 resistive switch Appl. Phys. Lett. 2007, 91, 92110
15. Lee, S.; Kim, W.-G.; Rhee, S.-W.; Yong, K. Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices J. Electrochem. Soc. 2008, 155, H92
16. Gibbons, J. F.; Beadle, W. E. Switching properties of thin NiO films Solid-State Electron. 1964, 7, 785
17. Tsuchiya, T.; Oyama, Y.; Miyoshi, S.; Yamaguchi, S. Nonstoichiometry- induced carrier modification in gapless type atomic switch device using Cu2S mixed conductor Appl. Phys. Express 2009, 2 055002
18. 2/Pt structure and resultant Cu ion diffusion Appl. Phys. Express 2009, 2 061401
19. 2/Pt interface under bias operation Appl. Phys. Lett. 2010, 97 082902
20. 2/Pt resistive random access memory structure Appl. Phys. Lett. 2011, 99 223517
21. Ellingham, H. J. T. Reducibility of oxides and sulfides in metallurgical processes J. Soc. Chem. Ind., London, Trans. Commun. 1944, 63, 125
22. Ahmet, P.; Yoo, Y. Z.; Hasegawa, T.; Koinuma, H.; Chikyow, T. The fabrication of the three components composition spread thin film with controlled composition and thickness Appl. Phys. A: Mater. Sci. Process. 2004, 79, 837
23. Nagata, T.; Ahmet, P.; Yoo, Y. Z.; Yamada, K.; Tsutui, K.; Wada, Y.; Chikyow, T. Schottky metal library for ZNO-based UV photodiode fabricated by the combinatorial ion beam-assisted deposition Appl. Surf. Sci. 2006, 252, 2503
24. 5:Pt structures by XPS Mater. Sci. Eng. 1998, B55, 134
25. Kohli, S.; McCurdy, P. R.; Rithner, C. D.; Dorhout, P. K.; Dummer, A. M.; Brizuela, F. C.; Menoni, S. X-ray characterization of oriented β-tantalum films Thin Solid Films 2004, 469, 404
26. Fontaine, R.; Caillat, R.; Feve, L.; Guittet, M. J. Déplacement chimique ESCA dans la série des oxydes du niobium J. Electron Spectrosc. Relat. Phenom. 1977, 10, 349
27. Simon, D.; Perrin, C.; Baillif, P. Electron spectrometric study (ESCA) of niobium and its oxides. Application to its oxidation at high temperature and low oxygen pressure C. R. Acad. Sci. Ser. C 1976, 283, 241
28. Yang, J. J.; Pickett, M. D.; Li, X.; Ohlberg, D. A. A.; Stewart, D. R.; Williams, R. S. Memoristive switching mechanism for metal/oxide/metal nanodevices Nat. Nanotechnol. 2008, 3, 429
29. 2/Pt thin film stack-A candidate for a non-volatile ReRAM Microelectron. Eng. 2007, 84, 1982