SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 95, Issue 23, 2009, Pages

InGaN multiquantum well structure with a reduced internal electric field and carrier decay process by tunneling

(5) Park, Y M a Son, J K a Chung, H J a Sone, C a Park, Y a

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DECAY; FLATBAND CONDITIONS; INGAN/GAN; INTERNAL ELECTRIC FIELDS; MULTIQUANTUM WELL STRUCTURES; PEAK ENERGY; PL INTENSITY; PL LIFETIME; TIME-RESOLVED PHOTOLUMINESCENCE;

BIAS VOLTAGE; ELECTRIC FIELD MEASUREMENT; SEMICONDUCTOR QUANTUM WELLS; SULFUR COMPOUNDS; TUNNELING (EXCAVATION); WIND TUNNELS;

ELECTRIC FIELDS;

EID: 71949128119 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3274137 Document Type: Article

Times cited : (25)

References (18)

1
- 0642275027
- 0163-1829. 10.1103/PhysRevB.56.R10024
- F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 0163-1829 56, R10024 (1997). 10.1103/PhysRevB.56.R10024
- (1997) Phys. Rev. B , vol.56 , pp. 10024
- Bernardini, F.¹ Fiorentini, V.² Vanderbilt, D.³

2
- 0000804836
- 0163-1829. 10.1103/PhysRevB.61.2159
- C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki, Phys. Rev. B 0163-1829 61, 2159 (2000). 10.1103/PhysRevB.61.2159
- (2000) Phys. Rev. B , vol.61 , pp. 2159
- Wetzel, C.¹ Takeuchi, T.² Amano, H.³ Akasaki, I.⁴

3
- 0000418855
- 0163-1829. 10.1103/PhysRevB.58.R13371
- M. Leroux, N. Grandjean, M. Laügt, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald, Phys. Rev. B 0163-1829 58, R13371 (1998). 10.1103/PhysRevB.58. R13371
- (1998) Phys. Rev. B , vol.58 , pp. 13371
- Leroux, M.¹ Grandjean, N.² Laügt, M.³ Massies, J.⁴ Gil, B.⁵ Lefebvre, P.⁶ Bigenwald, P.⁷

4
- 0141858877
- High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
- DOI 10.1063/1.1351517
- P. Lefebvre, A. Morel, M. Gallart, T. Taliercio, J. All̀gre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, and J. Massies, Appl. Phys. Lett. 0003-6951 78, 1252 (2001). 10.1063/1.1351517 (Pubitemid 33662255)
- (2001) Applied Physics Letters , vol.78 , Issue.9 , pp. 1252-1254
- Lefebvre, P.¹ Morel, A.² Gallart, M.³ Taliercio, T.⁴ Allegre, J.⁵ Gil, B.⁶ Mathieu, H.⁷ Damilano, B.⁸ Grandjean, N.⁹ Massies, J.¹⁰

5
- 0001590229
- 0021-8979. 10.1063/1.369664
- O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, J. Appl. Phys. 0021-8979 85, 3222 (1999). 10.1063/1.369664
- (1999) J. Appl. Phys. , vol.85 , pp. 3222
- Ambacher, O.¹ Smart, J.² Shealy, J.R.³ Weimann, N.G.⁴ Chu, K.⁵ Murphy, M.⁶ Schaff, W.J.⁷ Eastman, L.F.⁸ Dimitrov, R.⁹ Wittmer, L.¹⁰ Stutzmann, M.¹¹ Rieger, W.¹² Hilsenbeck, J.¹³

6
- 17644418746
- Determination of the piezoelectric field in InGaN quantum wells
- DOI 10.1063/1.1896446, 131108
- I. H. Brown, I. A. Pope, P. M. Smowton, P. Blood, J. D. Thomson, W. W. Chow, D. P. Bour, and M. Kneissl, Appl. Phys. Lett. 0003-6951 86, 131108 (2005). 10.1063/1.1896446 (Pubitemid 40564865)
- (2005) Applied Physics Letters , vol.86 , Issue.13 , pp. 1-3
- Brown, I.H.¹ Pope, I.A.² Smowton, P.M.³ Blood, P.⁴ Thomson, J.D.⁵ Chow, W.W.⁶ Bour, D.P.⁷ Kneissl, M.⁸

7
- 16644367462
- 0163-1829. 10.1103/PhysRevB.61.2711
- R. Cingolani, A. Botchkarev, H. Tang, H. Morkoc, G. Traetta, G. Coli, M. Lomascolo, A. Di Carlo, F. Della Sala, and P. Lugli, Phys. Rev. B 0163-1829 61, 2711 (2000). 10.1103/PhysRevB.61.2711
- (2000) Phys. Rev. B , vol.61 , pp. 2711
- Cingolani, R.¹ Botchkarev, A.² Tang, H.³ Morkoc, H.⁴ Traetta, G.⁵ Coli, G.⁶ Lomascolo, M.⁷ Di Carlo, A.⁸ Della Sala, F.⁹ Lugli, P.¹⁰

8
- 0001004335
- 0163-1829. 10.1103/PhysRevB.57.R9435
- J. S. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, Phys. Rev. B 0163-1829 57, R9435 (1998). 10.1103/PhysRevB.57.R9435
- (1998) Phys. Rev. B , vol.57 , pp. 9435
- Im, J.S.¹ Kollmer, H.² Off, J.³ Sohmer, A.⁴ Scholz, F.⁵ Hangleiter, A.⁶

9
- 0000541412
- Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures
- DOI 10.1063/1.122350, PII S0003695198020403
- S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, Appl. Phys. Lett. 0003-6951 73, 2006 (1998). 10.1063/1.122350 (Pubitemid 128672052)
- (1998) Applied Physics Letters , vol.73 , Issue.14 , pp. 2006-2008
- Chichibu, S.F.¹ Abare, A.C.² Minsky, M.S.³ Keller, S.⁴ Fleischer, S.B.⁵ Bowers, J.E.⁶ Hu, E.⁷ Mishra, U.K.⁸ Coldren, L.A.⁹ Denbaars, S.P.¹⁰ Sota, T.¹¹

10
- 35648977539
- Origin of efficiency droop in GaN-based light-emitting diodes
- DOI 10.1063/1.2800290
- M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, Appl. Phys. Lett. 0003-6951 91, 183507 (2007). 10.1063/1.2800290 (Pubitemid 350037243)
- (2007) Applied Physics Letters , vol.91 , Issue.18 , pp. 183507
- Kim, M.-H.¹ Schubert, M.F.² Dai, Q.³ Kim, J.K.⁴ Schubert, E.F.⁵ Piprek, J.⁶ Park, Y.⁷

11
- 49149091530
- 0003-6951. 10.1063/1.2963029
- M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. H. Yoon, S. M. Lee, C. S. Sone, T. Sakong, and Y. Park, Appl. Phys. Lett. 0003-6951 93, 041102 (2008). 10.1063/1.2963029
- (2008) Appl. Phys. Lett. , vol.93 , pp. 041102
- Schubert, M.F.¹ Xu, J.² Kim, J.K.³ Schubert, E.F.⁴ Kim, M.H.⁵ Yoon, S.H.⁶ Lee, S.M.⁷ Sone, C.S.⁸ Sakong, T.⁹ Park, Y.¹⁰

12
- 58149492901
- 0003-6951. 10.1063/1.3058687
- J. Xu, M. F. Schubert, A. N. Noemaun, D. Zhu, J. K. Kim, E. F. Schubert, M. H. Kim, H. J. Chung, S. Yoon, C. Sone, and Y. Park, Appl. Phys. Lett. 0003-6951 94, 011113 (2009). 10.1063/1.3058687
- (2009) Appl. Phys. Lett. , vol.94 , pp. 011113
- Xu, J.¹ Schubert, M.F.² Noemaun, A.N.³ Zhu, D.⁴ Kim, J.K.⁵ Schubert, E.F.⁶ Kim, M.H.⁷ Chung, H.J.⁸ Yoon, S.⁹ Sone, C.¹⁰ Park, Y.¹¹

13
- 67650504960
- 0003-6951. 10.1063/1.3176406
- Y. -K. Kuo, J. -Y. Chang, M. -C. Tsai, and S. -H. Yen, Appl. Phys. Lett. 0003-6951 95, 011116 (2009). 10.1063/1.3176406
- (2009) Appl. Phys. Lett. , vol.95 , pp. 011116
- Kuo, Y.-K.¹ Chang, J.-Y.² Tsai, M.-C.³ Yen, S.-H.⁴

14
- 0001598226
- Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
- DOI 10.1063/1.122247, PII S0003695198023389
- T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nakagawa, Y. Yamaoka, and N. Yamada, Appl. Phys. Lett. 0003-6951 73, 1691 (1998). 10.1063/1.122247 (Pubitemid 128671954)
- (1998) Applied Physics Letters , vol.73 , Issue.12 , pp. 1691-1693
- Takeuchi, T.¹ Wetzel, C.² Yamaguchi, S.³ Sakai, H.⁴ Amano, H.⁵ Akasaki, I.⁶ Kaneko, Y.⁷ Nakagawa, S.⁸ Yamaoka, Y.⁹ Yamada, N.¹⁰

15
- 21344445537
- 0031-9007. 10.1103/PhysRevLett.53.2173
- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, Phys. Rev. Lett. 0031-9007 53, 2173 (1984). 10.1103/PhysRevLett.53.2173
- (1984) Phys. Rev. Lett. , vol.53 , pp. 2173
- Miller, D.A.B.¹ Chemla, D.S.² Damen, T.C.³ Gossard, A.C.⁴ Wiegmann, W.⁵ Wood, T.H.⁶ Burrus, C.A.⁷

16
- 0000418339
- 0163-1829. 10.1103/PhysRevB.38.5496
- K. Köhler, H. -J. Polland, L. Schultheis, and C. W. Tu, Phys. Rev. B 0163-1829 38, 5496 (1988). 10.1103/PhysRevB.38.5496
- (1988) Phys. Rev. B , vol.38 , pp. 5496
- Köhler, K.¹ Polland, H.-J.² Schultheis, L.³ Tu, C.W.⁴

17
- 0037101092
- 0163-1829. 10.1103/PhysRevB.66.035334
- Y. D. Jho, J. S. Yahng, E. Oh, and D. S. Kim, Phys. Rev. B 0163-1829 66, 035334 (2002). 10.1103/PhysRevB.66.035334
- (2002) Phys. Rev. B , vol.66 , pp. 035334
- Jho, Y.D.¹ Yahng, J.S.² Oh, E.³ Kim, D.S.⁴

18
- 71949097252
- 2 the efficiencies of the GaN barrier and InGaN barrier samples are reduced by 19% and 14% from their peak values, respectively
- 2 the efficiencies of the GaN barrier and InGaN barrier samples are reduced by 19% and 14% from their peak values, respectively.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.