메뉴 건너뛰기




Volumn 16, Issue 6, 2013, Pages 1859-1864

Pn-Junction photodiode based on GaN grown on Si (111) by plasma-assisted molecular beam epitaxy

Author keywords

GaN; MBE; Semiconductor devices pn Junction diodes; XRD

Indexed keywords

ELECTRICAL CHARACTERISTIC; GAN; P-N JUNCTION; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; REFLECTANCE ANALYSIS; STRUCTURAL AND OPTICAL PROPERTIES; THERMAL ANNEALING TREATMENT; XRD;

EID: 84881291312     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2013.07.015     Document Type: Article
Times cited : (14)

References (25)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.