Challenges in the characterization and modeling of BTI induced variability in metal gate / High-k CMOS technologies

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2013, Pages

  Kerber, A ^a   Nigam, T ^b  

^a Technology Reliability Development   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

BTI variability; CMOS; high k dielectrics; metal gate; SRAM

Indexed keywords

BTI VARIABILITY; CIRCUIT AGING; CMOS TECHNOLOGY; HIGH-K DIELECTRIC; METAL GATE; PCI CARD; TESTING PROCEDURE;

CMOS INTEGRATED CIRCUITS; GATE DIELECTRICS; STATIC RANDOM ACCESS STORAGE;

INTEGRATED CIRCUITS;

EID: 84880975018     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2013.6531959     Document Type: Conference Paper

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