Competitive and cost effective high-k based 28nm CMOS technology for low power applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Arnaud, F ^a,b   Thean, A ^a,c   Eller, M ^a,d   Lipinski, M ^a,d   The, Y W ^a,e   Ostermayr, M ^a,d   Kang, K ^a,f   Kim, N S ^a,e   Ohuchi, K ^a,g   Han, J P ^a,d   Nair, D R ^a,c   Lian, J ^a,d   Uchimura, S ^a,g   Kohler, S ^a,b   Miyaki, S ^a,h   Ferreira, P ^a,b   Park, J H ^a,f   Hamaguchi, M ^a,g   Miyashita, K ^a,g   Augur, R ^a,c   Zhang, Q ^a,c   Strahrenberg, K ^a,e   ElGhouli, S ^a,b   Bonnouvrier, J ^a,b   Matsuoka, F ^a,g   Lindsay, R ^a,d   Sudijono, J ^a,e   Johnson, F S ^a,c   Ku, J H ^a,f   Sekine, M ^a,h   Steegen, A ^a,c   Sampson, R ^a,b   more..

^a IBM RESEARCH   (United States)

^b STMICROELECTRONICS   (Italy)

^c IBM MICROELECTRONICS   (United States)

^d INFINEON TECHNOLOGIES AG   (Germany)

^e Chartered Semiconductor Manufacturing ^*  (Singapore)

^f SAMSUNG Electronics   (South Korea)

^g TOSHIBA CORPORATION   (Japan)

^h NEC EL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

45NM TECHNOLOGY; ANALOG DEVICES; AREA REDUCTION; CMOS TECHNOLOGY; COST EFFECTIVE; FULLY COMPATIBLE; GATE DENSITY; HIGH DENSITY WIRING; HIGH-DENSITY; LOW POWER APPLICATION; LOW-POWER DESIGN; MANAGEMENT TECHNIQUES; MATCHING FACTOR; METAL-GATE; METALLIZATIONS; STATIC NOISE MARGIN; SYSTEM ON CHIPS; TRANSISTOR DRIVE CURRENTS;

APPLICATION SPECIFIC INTEGRATED CIRCUITS; COST EFFECTIVENESS; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRON DEVICES; GATES (TRANSISTOR); MICROPROCESSOR CHIPS; STATIC RANDOM ACCESS STORAGE; TECHNOLOGY;

CMOS INTEGRATED CIRCUITS;

EID: 77952337060     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424255     Document Type: Conference Paper

References (5)

1. X.Chen et al, Symp. VLSI Tech.Dig., 2008
2. F.Arnaud et al, IEDM Tech. Dig., 2008
3. S-Y Wu et al, Symp. VLSI Tech. Dig. 2009
4. M.Chudzik et al, VLSI Tech. Dig., 2007
5. H.S.Yang et al, IEDM Tech. Dig. 2008