InGaAs quantum dot superlattice with vertically coupled states in InGaP matrix

Journal of Applied Physics

Volumn 114, Issue 1, 2013, Pages

  Sugaya, Takeyoshi ^a   Oshima, Ryuji ^a   Matsubara, Koji ^a   Niki, Shigeru ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITATION POWER; EXCITATION POWER DENSITY; EXCITATION POWER DEPENDENCE; PEAK WAVELENGTH; PHOTOLUMINESCENCE MEASUREMENTS; QUANTUM DOT SUPERLATTICES; SHORTER WAVELENGTH; SOLAR CELL DEVICES;

ENERGY TRANSFER; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS;

SUPERLATTICES;

EID: 84880907699     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4812567     Document Type: Article

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