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Volumn 378, Issue , 2013, Pages 576-578
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InGaP solar cells fabricated using solid-source molecular beam epitaxy
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Author keywords
Molecular beam epitaxy; Phosphide; Phosphides; Semiconducting indium gallium; Solar cells
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Indexed keywords
CELL GROWTH;
GALLIUM PHOSPHIDE;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
OPEN CIRCUIT VOLTAGE;
PHOSPHORUS COMPOUNDS;
SEMICONDUCTING INDIUM;
SEMICONDUCTING INDIUM PHOSPHIDE;
SOLAR CELLS;
X RAY DIFFRACTION;
GAAS(1 0 0);
GROWTH CONDITIONS;
HIGH QUALITY;
PHOSPHIDE;
PHOSPHIDES;
SOLID SOURCE MOLECULAR BEAM EPITAXY;
X-RAY DIFFRACTION MEASUREMENTS;
EPITAXIAL GROWTH;
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EID: 84885483775
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2012.11.008 Document Type: Article |
Times cited : (26)
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References (10)
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