Highly stacked and high-quality quantum dots fabricated by intermittent deposition of InGaAs

Japanese Journal of Applied Physics

Volumn 49, Issue 3 PART 1, 2010, Pages

  Sugaya, Takeyoshi ^a   Amano, Takeru ^a   Mori, Masahiko ^a   Niki, Shigeru ^a   Kondo, Michio ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL QUALITIES; GAAS; HIGH QUALITY; HIGH TEMPERATURE; INAS; INGAAS-QD; PHOTOLUMINESCENCE MEASUREMENTS; QUANTUM DOT; QUANTUM DOTS; STACK STRUCTURE; STRAIN COMPENSATION; WELL-ALIGNED;

LATTICE MISMATCH; OPTICAL WAVEGUIDES; SEMICONDUCTOR QUANTUM DOTS; SUPERCONDUCTING FILMS;

SEMICONDUCTING INDIUM;

EID: 77954006133     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.030211     Document Type: Article

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