Tunnel current through a miniband in InGaAs quantum dot superlattice solar cells

Solar Energy Materials and Solar Cells

Volumn 95, Issue 10, 2011, Pages 2920-2923

  Sugaya, T ^a   Numakami, O ^a,b   Furue, S ^a   Komaki, H ^a   Amano, T ^a   Matsubara, K ^a   Okano, Y ^b   Niki, S ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

Author keywords

Miniband; Quantum dot solar cell; Superlattice; Tunnel current

Indexed keywords

BALANCING TECHNIQUES; EXTERNAL QUANTUM EFFICIENCY; HIGH QUALITY; MINIBANDS; QUANTUM DOT SOLAR CELL; QUANTUM DOT SUPERLATTICES; SUPER-LATTICE STRUCTURES; TEMPERATURE DEPENDENCE; TUNNEL CURRENT; TUNNEL CURRENTS; WELL-ALIGNED;

GALLIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPEN CIRCUIT VOLTAGE; SEMICONDUCTOR QUANTUM DOTS;

SUPERLATTICES;

EID: 79960558171     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.06.034     Document Type: Article

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