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Volumn 378, Issue , 2013, Pages 430-434
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In(Ga)As quantum dots on InGaP layers grown by solid-source molecular beam epitaxy
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Author keywords
Low dimensional structure; Molecular beam epitaxy; Nanostructures; Phosphides; Semiconducting indium gallium phosphide
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Indexed keywords
EPITAXIAL GROWTH;
GALLIUM ARSENIDE;
GALLIUM PHOSPHIDE;
INDIUM;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
NANOCRYSTALS;
NANOSTRUCTURES;
PHOSPHORUS COMPOUNDS;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING INDIUM;
SEMICONDUCTING INDIUM PHOSPHIDE;
ENERGY DIFFERENCES;
HIGH UNIFORMITY;
INTERMEDIATE-BAND SOLAR CELLS;
LOW DIMENSIONAL STRUCTURE;
PHOSPHIDES;
PHOTOLUMINESCENCE MEASUREMENTS;
SEMICONDUCTING INDIUM GALLIUM PHOSPHIDE;
SOLID SOURCE MOLECULAR BEAM EPITAXY;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 84885428114
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2012.12.065 Document Type: Article |
Times cited : (18)
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References (13)
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