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Volumn 378, Issue , 2013, Pages 430-434

In(Ga)As quantum dots on InGaP layers grown by solid-source molecular beam epitaxy

Author keywords

Low dimensional structure; Molecular beam epitaxy; Nanostructures; Phosphides; Semiconducting indium gallium phosphide

Indexed keywords

EPITAXIAL GROWTH; GALLIUM ARSENIDE; GALLIUM PHOSPHIDE; INDIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOCRYSTALS; NANOSTRUCTURES; PHOSPHORUS COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 84885428114     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.12.065     Document Type: Article
Times cited : (18)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.