InGaP-based InGaAs quantum dot solar cells with GaAs spacer layer fabricated using solid-source molecular beam epitaxy

Applied Physics Letters

Volumn 101, Issue 13, 2012, Pages

  Sugaya, T ^a   Takeda, A ^a,b   Oshima, R ^a   Matsubara, K ^a   Niki, S ^a   Okano, Y ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; HIGH QUALITY; INGAAS-QD; PHOTOLUMINESCENCE INTENSITIES; QUANTUM DOT SOLAR CELLS; SOLID SOURCE MOLECULAR BEAM EPITAXY; SPACER LAYER;

EPITAXIAL GROWTH; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SOLAR CELLS;

SEMICONDUCTING INDIUM;

EID: 84874582611     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4755757     Document Type: Article

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