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Japanese Journal of Applied Physics

Volumn 52, Issue 5 PART 1, 2013, Pages

Influence of isoelectronic te doping on the physical properties of ZnO films grown by molecular-beam epitaxy

(8) Park, Seung Hwan a,e Minegishi, Tsutomu a Oh, Dong Cheol b Kim, Dong Jin b Chang, Ji Ho c Yao, Takafumi a Taishi, Toshinori d Yonenaga, Ichiro d

a TOHOKU UNIVERSITY (Japan)

b Hoseo University (South Korea)

c Korea Maritime University (South Korea)

d TOHOKU UNIVERSITY (Japan)

e Saint Gobain Research Corporate Limited (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAIN; CRYSTALLINE QUALITY; DONOR IMPURITIES; LOGARITHMIC SCALE; RELAXATION MECHANISM; TE DOPING; ZNO; ZNO FILMS;

EPITAXIAL GROWTH; MOLECULAR BEAMS; PHYSICAL PROPERTIES; ZINC OXIDE;

METALLIC FILMS;

EID: 84880863034 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.7567/JJAP.52.055501 Document Type: Article

Times cited : (7)

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