Strain effects on exciton resonance energies of ZnO epitaxial layers

Applied Physics Letters

Volumn 79, Issue 9, 2001, Pages 1282-1284

  Makino, T ^a   Yasuda, T ^a,c   Segawa, Y ^a   Ohtomo, A ^b   Tamura, K ^b   Kawasaki, M ^b,d   Koinuma, H ^b,e  

^a RIKEN   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c ISHINOMAKI SENSHU UNIVERSITY   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

^e JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038974360     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1398328     Document Type: Article

References (24)

1. P. Yu, Z. K. Tang, G. K. L. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa, in Proceedings of 23rd International Conference on Physics of Semiconductors, Berlin, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), Vol. 2, p. 1453.
2. P. Yu, Z. K. Tang, G. K. L. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa, Solid State Commun. 103, 459 (1997).
3. D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen, and T. Goto, Appl. Phys. Lett. 70, 2230 (1997).
4. G. Frankowsky, F. Steuber, V. Harle, F. Scholz, and A. Hangleiter, Appl. Phys. Lett. 68, 3746 (1996).
5. E. Mollwo, in Semiconductors: Physics of II-VI and I-VII Compounds, Semimagnetic Semiconductors, Vol. 17 of Landolt-Börnstein New Series, edited by O. Madelung, M. Schulz, and H. Weiss (Springer, Berlin, 1982), p. 35.
6. D. G. Thomas, J. Phys. Chem. Solids 15, 86 (1960).
7. J. J. Hopfield, J. Phys. Chem. Solids 15, 97 (1960).
8. A. Shikanai, T. Azuhata, T. Sota, S. Chichibu, A. Kuramata, K. Horino, and S. Nakamura, J. Appl. Phys. 81, 417 (1997).
9. J. E. Rowe, M. Cardona, and F. H. Pollak, Solid State Commun. 6, 239 (1968).
10. G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effects in Semi-conductors (Wiley, New York, 1974).
11. The exciton binding energies are dominated by the conduction band mass, and hence the energy differences in the three ground-state excitons are due to the splitting of the valence band by the hexagonal crystal-field and the spin-orbit interaction.
12. D. C. Reynolds, D. C. Look, B. Jogai, C. W. Litton, W. Harsch, and G. Cantwell, Phys. Rev. B 60, 2340 (1999).
13. We follow the valence band ordering of Thomas and Hopfield (Refs. 6 and 7) in this work. There has been considerable controversy regarding the ordering. See the recent article by Reynolds et al. (Ref. 12). Rowe et al. have investigated the effects of static uniaxial compressive stress on the valence band characteristics of bulk ZnO and supported the Thomas-Hopfield interpretation (Ref. 9). From our study, the sign of the splitting (Ref. 6) could not be determined because we could not access the strain range in which the nonlinearity on the strain effect becomes unnegligible.
14. W. Y. Liang and A. D. Yoffe, Phys. Rev. Lett. 20, 59 (1968).
15. A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, and Y. Segawa, Appl. Phys. Lett. 72, 2466 (1998).
16. A. Bykhovski, B. Gelmont, and M. Shur, J. Appl. Phys. 74, 6734 (1993).
17. R. B. Schwarz, K. Khachaturyan, and E. R. Weber, Appl. Phys. Lett. 70, 1122 (1997).
18. Y. Matsumoto, M. Murakami, Z. W. Jin, A. Ohtomo, M. Lippmaa, M. Kawasaki, and H. Koinuma, Jpn. J. Appl. Phys., Part 2 38, L603 (1999).
19. L. Görgens, O. Ambacher, M. Stutzmann, C. Miskys, F. Scholz, and J. Off, Appl. Phys. Lett. 76, 577 (2000).
20. T. Makino, Y. Segawa, M. Kawasaki, A. Ohtomo, R. Shiroki, K. Tamura, T. Yasuda, and H. Koinuma, Appl. Phys. Lett. 78, 1237 (2001).
21. T. Makino, N. T. Tuan, Y. Segawa, C. H. Chia, M. Kawasaki, A. Ohtomo, K. Tamura, and H. Koinuma, Appl. Phys. Lett. 77, 1632 (2000).
22. T. Makino, N. T. Tuan, H. D. Sun, C. H. Chia, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, and H. Koinuma, Appl. Phys. Lett. 77, 975 (2000).
23. S. Nakamura, S. Pearton, and G. Fasol, The Blue Laser Diode (Springer, Berlin, 2000).
24. S. F. Chichibu, T. Sota, K. Wada, S. P. DenBaars, and S. Nakamura, MRS Internet J. Nitride Semicond. Res. 4S1, G2.7 (1999).