GaN lateral overgrowth by hydride vapor phase epitaxy through nanometer-size channels fabricated with nanoimprint lithography

Japanese Journal of Applied Physics

Volumn 52, Issue 8 PART 2, 2013, Pages

  Usui, Akira ^a   Matsueda, Toshiharu ^a   Goto, Hiroki ^a   Sunakawa, Haruo ^a   Fujiyama, Yasuharu ^a   Ishihara, Yujiro ^a   Okada, Akiko ^b   Shoji, Shuichi ^b   Yamaguchi, Atsushi A ^c   Nishihara, Hiromi ^d   Shinohara, Hidetoshi ^d   Goto, Hiroshi ^d   Mizuno, Jun ^b  

^a FURUKAWA CO LTD   (Japan)

^b WASEDA UNIVERSITY   (Japan)

^c KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

^d Toshiba Machine Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITIES; DISLOCATION REDUCTION; EPITAXIAL LATERAL OVERGROWTH; GROWTH INTERFACES; HYDRIDE VAPOR PHASE EPITAXY; LATERAL OVERGROWTH; NANOMETER SIZE; PHOTOLUMINESCENCE MEASUREMENTS;

EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOIMPRINT LITHOGRAPHY; SAPPHIRE; SINGLE CRYSTALS; VAPORS;

GALLIUM NITRIDE;

EID: 84880841025     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.52.08JB02     Document Type: Article

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