CoFeB thickness dependence of thermal stability factor in CoFeB/MgO perpendicular magnetic tunnel junctions

IEEE Magnetics Letters

Volumn 3, Issue , 2012, Pages

  Sato, H ^a   Yamanouchi, M ^a   Miura, K ^a,b   Ikeda, S ^a   Koizumi, R ^a   Matsukura, F ^a   Ohno, H ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

magnetic random access memory; magnetic tunnel junctions (MTJs); Spin electronics

Indexed keywords

JUNCTION SIZE; MAGNETIC RANDOM ACCESS MEMORIES; MAGNETIC TUNNEL JUNCTION; MODEL-BASED OPC; PERPENDICULAR ANISOTROPY; RECORDING LAYERS; SPIN ELECTRONIC; THICKNESS DEPENDENCE;

COBALT COMPOUNDS; MAGNETIC STORAGE; MAGNETIZATION REVERSAL; THERMODYNAMIC STABILITY;

MAGNETIC DEVICES;

EID: 84860520656     PISSN: 1949307X     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMAG.2012.2190722     Document Type: Article

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