GaN nanobelt-based strain-gated piezotronic logic devices and computation

ACS Nano

Volumn 7, Issue 7, 2013, Pages 6403-6409

  Yu, Ruomeng ^a   Wu, Wenzhuo ^a   Ding, Yong ^a   Wang, Zhong Lin ^a,b  

^a Georgia Institute of Technology   (United States)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

GaN nanobelts; logic computation; logic nanodevices; piezotronics; strain gated transistor

Indexed keywords

BIOMEDICAL DIAGNOSIS; ELECTRICAL DOMAINS; GAN NANOBELTS; LOGIC COMPUTATION; MECHANICAL STIMULUS; NANO-DEVICES; PIEZOELECTRIC POLARIZATIONS; PIEZOTRONICS;

GALLIUM NITRIDE; LOGIC DEVICES; NANOBELTS; SCHOTTKY BARRIER DIODES; STRAIN; ZINC SULFIDE;

COMPUTATION THEORY;

GALLIUM; GALLIUM NITRIDE; METAL NANOPARTICLE;

CHEMISTRY; COMPUTER ANALYSIS; DEVICE FAILURE ANALYSIS; DEVICES; EQUIPMENT DESIGN; MECHANICAL STRESS; MICROELECTROMECHANICAL SYSTEM; NANOTECHNOLOGY; SEMICONDUCTOR; SIGNAL PROCESSING; TENSILE STRENGTH; ULTRASTRUCTURE; YOUNG MODULUS; ARTICLE; EQUIPMENT; EQUIPMENT FAILURE;

COMPUTING METHODOLOGIES; ELASTIC MODULUS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; METAL NANOPARTICLES; MICRO-ELECTRICAL-MECHANICAL SYSTEMS; NANOTECHNOLOGY; SIGNAL PROCESSING, COMPUTER-ASSISTED; STRESS, MECHANICAL; TENSILE STRENGTH; TRANSISTORS, ELECTRONIC;

EID: 84880797156     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn4026788     Document Type: Article

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