Piezotronic effect on the transport properties of GaN nanobelts for active flexible electronics

Advanced Materials

Volumn 24, Issue 26, 2012, Pages 3532-3537

  Yu, Ruomeng ^a   Dong, Lin ^a,b   Pan, Caofeng ^a   Niu, Simiao ^a   Liu, Hongfei ^d   Liu, Wei ^e   Chua, Soojin ^d   Chi, Dongzhi ^d   Wang, Zhong Lin ^a,c  

^a Georgia Institute of Technology   (United States)

^b ZHENGZHOU UNIVERSITY   (China)

^c INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^d INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^e NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

flexible electronics; GaN nanobelts; piezotronic effects

Indexed keywords

PIEZOTRONIC EFFECTS; SCHOTTKY BARRIER HEIGHTS; THEORETICAL MODELS;

FLEXIBLE ELECTRONICS; GALLIUM NITRIDE; NANOBELTS; SEMICONDUCTOR METAL BOUNDARIES;

TRANSPORT PROPERTIES;

GALLIUM; GALLIUM NITRIDE; NANOMATERIAL;

ARTICLE; CHEMISTRY; ELECTRICAL EQUIPMENT; MECHANICS; THEORETICAL MODEL;

ELECTRICAL EQUIPMENT AND SUPPLIES; GALLIUM; MECHANICAL PROCESSES; MODELS, THEORETICAL; NANOSTRUCTURES;

EID: 84863692935     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201201020     Document Type: Article

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