Organic nano-floating-gate memory with polymer:[6,6]-Phenyl-C61 butyric acid methyl ester composite films

Japanese Journal of Applied Physics

Volumn 49, Issue 5 PART 2, 2010, Pages

  Baeg, Kang Jun ^a   Khim, Dongyoon ^a   Kim, Dong Yu ^a   Jung, Soon Won ^b   Koo, Jae Bon ^b   Noh, Yong Young ^c  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c Hanbat National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BUTYRIC ACIDS; CHARGE STORAGE; GATE VOLTAGES; HIGH FIELD; MEMORY DEVICE; MEMORY WINDOW; METHYL ESTERS; NANO-FLOATING; NANOCOMPOSITE FILM; NON-VOLATILE; ON/OFF RATIO; PENTACENES; RETENTION TIME; SHORT DURATIONS;

DIELECTRIC MATERIALS; ESTERIFICATION; ESTERS; FATTY ACIDS; PHENOLS; POLYMER FILMS; SEMICONDUCTING ORGANIC COMPOUNDS;

COMPOSITE FILMS;

EID: 77952990555     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.05EB01     Document Type: Article

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