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Volumn 93, Issue 2, 2008, Pages

A gate dielectric that enables high ambipolar mobilities in polymer light-emitting field-effect transistors

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GATE DIELECTRICS; GATES (TRANSISTOR); LIGHT EMISSION; POLYMERS; TRANSISTORS;

EID: 47549104720     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2957472     Document Type: Article
Times cited : (48)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.