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Volumn 93, Issue 2, 2008, Pages
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A gate dielectric that enables high ambipolar mobilities in polymer light-emitting field-effect transistors
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT DENSITY;
GATE DIELECTRICS;
GATES (TRANSISTOR);
LIGHT EMISSION;
POLYMERS;
TRANSISTORS;
AMBIPOLAR;
FIELD EFFECT TRANSISTOR (FET);
HIGH-CURRENT-DENSITY (HCD);
FIELD EFFECT TRANSISTORS;
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EID: 47549104720
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2957472 Document Type: Article |
Times cited : (48)
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References (15)
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