SCOPUS 정보 검색 플랫폼

Volumn 22, Issue 39, 2012, Pages 21138-21143

Effects of gate dielectrics and their solvents on characteristics of solution-processed N-channel polymer field-effect transistors

(3) Baeg, Kang Jun b,d Facchetti, Antonio c Noh, Yong Young a

a Hanbat National University (South Korea)

b Electronics and Telecommunications Research Institute (ETRI) (South Korea)

c POLYERA CORPORATION (United States)

d NORTHWESTERN UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL PROPERTIES; DIELECTRIC MATERIALS; ESTERS; NAPHTHALENE; ORGANIC FIELD EFFECT TRANSISTORS; PHENOLS; POLYMERS; SOLVENTS;

1 ,2-DICHLOROETHANES; 1-BUTANOL; DIELECTRIC INTERFACE; ELECTRON TRAPPING; FIELD-EFFECT MOBILITIES; HYDROXYL GROUPS; N-CHANNEL; ORTHOGONALITY; POLYMER FIELD EFFECT TRANSISTORS; POLYMER GATE DIELECTRICS; SEMICONDUCTOR-DIELECTRIC INTERFACE; SOLUTION-PROCESSED;

GATE DIELECTRICS;

EID: 84870427304 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c2jm34218a Document Type: Article

Times cited : (46)

References (23)

1
- 27144540626
- H. Sirringhaus Adv. Mater. 2005 17 2411
- (2005) Adv. Mater. , vol.17 , pp. 2411
- Sirringhaus, H.¹

2
- 75749132800
- A. C. Arias J. D. MacKenzie I. McCulloch J. Rivnay A. Salleo Chem. Rev. 2010 110 3
- (2010) Chem. Rev. , vol.110 , pp. 3
- Arias, A.C.¹ MacKenzie, J.D.² McCulloch, I.³ Rivnay, J.⁴ Salleo, A.⁵

3
- 67650951457
- H. E. Katz J. Huang Annu. Rev. Mater. Res. 2009 39 71
- (2009) Annu. Rev. Mater. Res. , vol.39 , pp. 71
- Katz, H.E.¹ Huang, J.²

4
- 33846219497
- J. E. Anthony Chem. Rev. 2006 12 5028
- (2006) Chem. Rev. , vol.12 , pp. 5028
- Anthony, J.E.¹

5
- 48549097194
- Y.-L. Loo I. McCulloch MRS Bull. 2008 33 653
- (2008) MRS Bull. , vol.33 , pp. 653
- Loo, Y.-L.¹ McCulloch, I.²

6
- 36849079913
- Y.-Y. Noh N. Zhao M. Caironi H. Sirringhaus Nat. Nanotechnol. 2007 2 784
- (2007) Nat. Nanotechnol. , vol.2 , pp. 784
- Noh, Y.-Y.¹ Zhao, N.² Caironi, M.³ Sirringhaus, H.⁴

7
- 0842283382
- G. H. Gelinck H. E. A Huitema E. V. Veenendaal E. Cantatore L. Schrijnemakers J. B. P. H. Van Der Putten T. C. T. Geuns M. Beenhakkers J. B. Giesbers B.-H. Huisman E. J. Meijer E. M. Benito F. J. Touwslager A. W. Marsman B. J. E. Van Rens D. M. De Leeuw Nat. Mater. 2004 3 106
- (2004) Nat. Mater. , vol.3 , pp. 106
- Gelinck, G.H.¹ Huitema H E, A.² Veenendaal, E.V.³ Cantatore, E.⁴ Schrijnemakers, L.⁵ Van Der Putten, J.B.P.H.⁶ Geuns, T.C.T.⁷ Beenhakkers, M.⁸ Giesbers, J.B.⁹ Huisman, B.-H.¹⁰ Meijer, E.J.¹¹ Benito, E.M.¹² Touwslager, F.J.¹³ Marsman, A.W.¹⁴ Van Rens, B.J.E.¹⁵ De Leeuw, D.M.¹⁶

8
- 33846677870
- K. Sanderson Nature 2007 445 473
- (2007) Nature , vol.445 , pp. 473
- Sanderson, K.¹

9
- 67349198513
- T. Sekitani H. Nakajima H. Maeda T. Fukushima T. Aida K. Hata T. Someya Nat. Mater. 2009 8 494
- (2009) Nat. Mater. , vol.8 , pp. 494
- Sekitani, T.¹ Nakajima, H.² Maeda, H.³ Fukushima, T.⁴ Aida, T.⁵ Hata, K.⁶ Someya, T.⁷

10
- 33846253563
- E. Cantatore T. C. T. Geuns G. H. Gelinck E. Van Veenendaal A. F. A. Gruijthuijsen L. Schrijnemakers S. Drews D. M. De Leeuw IEEE J. Solid-State Circuits 2007 42 84
- (2007) IEEE J. Solid-State Circuits , vol.42 , pp. 84
- Cantatore, E.¹ Geuns, T.C.T.² Gelinck, G.H.³ Van Veenendaal, E.⁴ Gruijthuijsen, A.F.A.⁵ Schrijnemakers, L.⁶ Drews, S.⁷ De Leeuw, D.M.⁸

11
- 13644276620
- Y.-Y. Noh D.-Y. Kim Y. Yoshida K. Yase B.-J. Jung E. Lim H.-K. Shim Appl. Phys. Lett. 2005 86 043501
- (2005) Appl. Phys. Lett. , vol.86 , pp. 043501
- Noh, Y.-Y.¹ Kim, D.-Y.² Yoshida, Y.³ Yase, K.⁴ Jung, B.-J.⁵ Lim, E.⁶ Shim, H.-K.⁷

12
- 33846181640
- K.-J. Baeg Y.-Y. Noh J. Ghim S.-J. Kang H. Lee D.-Y. Kim Adv. Mater. 2006 18 3179
- (2006) Adv. Mater. , vol.18 , pp. 3179
- Baeg, K.-J.¹ Noh, Y.-Y.² Ghim, J.³ Kang, S.-J.⁴ Lee, H.⁵ Kim, D.-Y.⁶

13
- 1642329909
- B. S. Ong Y. L. Wu P. Liu S. Gardner J. Am. Chem. Soc. 2004 126 3378
- (2004) J. Am. Chem. Soc. , vol.126 , pp. 3378
- Ong, B.S.¹ Wu, Y.L.² Liu, P.³ Gardner, S.⁴

14
- 33645648893
- I. McCulloch M. Heeney C. Bailey K. Genevicius I. Macdonald M. Shkunov D. Sparrowe S. Tierney R. Wagner W. M. Zhang M. L. Chabinyc R. J. Kline M. D. McGehee M. F. Toney Nat. Mater. 2006 5 328
- (2006) Nat. Mater. , vol.5 , pp. 328
- McCulloch, I.¹ Heeney, M.² Bailey, C.³ Genevicius, K.⁴ MacDonald, I.⁵ Shkunov, M.⁶ Sparrowe, D.⁷ Tierney, S.⁸ Wagner, R.⁹ Zhang, W.M.¹⁰ Chabinyc, M.L.¹¹ Kline, R.J.¹² McGehee, M.D.¹³ Toney, M.F.¹⁴

15
- 59649111119
- H. Yan Z. Chen Y. Zheng C. Newman J. R. Quinn F. Dötz M. Kastler A. Facchetti Nature 2009 457 679
- (2009) Nature , vol.457 , pp. 679
- Yan, H.¹ Chen, Z.² Zheng, Y.³ Newman, C.⁴ Quinn, J.R.⁵ Dötz, F.⁶ Kastler, M.⁷ Facchetti, A.⁸

16
- 15244338556
- L. L. Chua J. Zaumseil J. F. Chang E. C. W. Ou P. K. H. Ho H. Sirringhaus R. H. Friend Nature 2005 434 194
- (2005) Nature , vol.434 , pp. 194
- Chua, L.L.¹ Zaumseil, J.² Chang, J.F.³ Ou, E.C.W.⁴ Ho, P.K.H.⁵ Sirringhaus, H.⁶ Friend, R.H.⁷

17
- 33749533450
- M.-H. Yoon C. Kim A. Facchetti T. J. Marks J. Am. Chem. Soc. 2006 128 12851
- (2006) J. Am. Chem. Soc. , vol.128 , pp. 12851
- Yoon, M.-H.¹ Kim, C.² Facchetti, A.³ Marks, T.J.⁴

18
- 0034672078
- H. Sirringhaus T. Kawase R. H. Friend T. Shimoda M. Inbasekaran W. Wu E. P. Woo Science 2000 290 2123
- (2000) Science , vol.290 , pp. 2123
- Sirringhaus, H.¹ Kawase, T.² Friend, R.H.³ Shimoda, T.⁴ Inbasekaran, M.⁵ Wu, W.⁶ Woo, E.P.⁷

19
- 36249012402
- T. J. Richards H. Sirringhaus J. Appl. Phys. 2007 102 094510
- (2007) J. Appl. Phys. , vol.102 , pp. 094510
- Richards, T.J.¹ Sirringhaus, H.²

20
- 58049168055
- Y.-Y. Noh H. Sirringhaus Org. Electron. 2009 10 174
- (2009) Org. Electron. , vol.10 , pp. 174
- Noh, Y.-Y.¹ Sirringhaus, H.²

21
- 82655177022
- K.-J. Baeg D. Khim S.-W. Jung J. B. Koo I.-K. You Y.-C. Nah D.-Y. Kim Y.-Y. Noh ETRI J. 2011 33 887
- (2011) ETRI J. , vol.33 , pp. 887
- Baeg, K.-J.¹ Khim, D.² Jung, S.-W.³ Koo, J.B.⁴ You, I.-K.⁵ Nah, Y.-C.⁶ Kim, D.-Y.⁷ Noh, Y.-Y.⁸

22
- 0004005306
- ed., Wiley Interscience, New York, 3rd edn
- Physics of Semiconductor Devices, ed., S. M. Sze, and, K. K. Ng, Wiley Interscience, New York, 3rd edn, 2007
- (2007) Physics of Semiconductor Devices
- Sze, S.M.¹ Ng, K.K.²

23
- 81855226503
- D. Fazzi M. Caironi C. Castiglioni J. Am. Chem. Soc. 2011 133 19056
- (2011) J. Am. Chem. Soc. , vol.133 , pp. 19056
- Fazzi, D.¹ Caironi, M.² Castiglioni, C.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.