Scaling of black silicon processing time by high repetition rate femtosecond lasers

Optical Materials Express

Volumn 3, Issue 5, 2013, Pages 612-623

  Nava, Giorgio ^a,b   Osellame, Roberto ^c   Ramponi, Roberta ^a,b,c   Vishnubhatla, Krishna Chaitanya ^a  

^a ISTITUTO ITALIANO DI TECNOLOGIA   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION PARAMETERS; HIGH REPETITION RATE; LASER REPETITION RATE; POTENTIAL REDUCTION; PROCESSING TIME; SILICON SUBSTRATES; SURFACE-TEXTURING; VISIBLE REGION;

SILICON; ULTRAFAST LASERS; ULTRASHORT PULSES;

SILICON WAFERS;

EID: 84880434344     PISSN: None     EISSN: 21593930     Source Type: Journal    
DOI: 10.1364/OME.3.000612     Document Type: Article

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